- A memory that is written and read by an electron beam. In the writing action the beam either does, or does not, deposit electrons according to a one or zero input. In the reading action the effect of the beam on the charged or uncharged area is detected.; 一種用電子束進(jìn)行讀/寫(xiě)的存儲(chǔ)器。在寫(xiě)操作時(shí),根據(jù)輸入是1還是0決定電子束是否沉積 電子。在讀操作時(shí),則是檢測(cè)電子束在有電荷區(qū)或無(wú)電荷區(qū)的效應(yīng)。
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